SI1022R-T1-GE3 Vishay Siliconix

This is manufactured by Vishay Siliconix. The manufacturer part number is SI1022R-T1-GE3. It has typical 14 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 1.25ohm @ 500ma, 10v. It features n-channel 60v 330ma (ta) 250mw (ta) surface mount sc-75a. The product's input capacitance at maximum includes 30pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. Furthermore, the product is active The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 0.6nc @ 4.5v. sc-75a is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 250mw (ta). The product has a 60v drain to source voltage. The continuous current drain at 25°C is 330ma (ta). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.

Vishay Siliconix SI1022R-T1-GE3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SI1022R-T1-GE3
Enrgtech Part No:
ET20133556
Warranty:
Manufacturer
£ 0.42
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Manufacturer Standard Lead Time:
14 Weeks
Rds On (Max) @ Id, Vgs:
1.25Ohm @ 500mA, 10V
Detailed Description:
N-Channel 60V 330mA (Ta) 250mW (Ta) Surface Mount SC-75A
Input Capacitance (Ciss) (Max) @ Vds:
30pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Part Status:
Active
Series:
TrenchFET®
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
0.6nC @ 4.5V
Supplier Device Package:
SC-75A
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
SC-75A
Power Dissipation (Max):
250mW (Ta)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
330mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Vishay Siliconix
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Si1022R(Datasheets)


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