This is manufactured by Vishay Siliconix. The manufacturer part number is SI2307BDS-T1-E3. It has a maximum Rds On and voltage of 78mohm @ 3.2a, 10v. It features p-channel 30v 2.5a (ta) 750mw (ta) surface mount sot-23-3 (to-236). The product's input capacitance at maximum includes 380pf @ 15v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. Furthermore, the product is active The product trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 15nc @ 10v. sot-23-3 (to-236) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 750mw (ta). The product has a 30v drain to source voltage. The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.

For more information please check the datasheets.

Vishay Siliconix SI2307BDS-T1-E3

Manufacturer:

Vishay Siliconix

Manufacturer Part No:

SI2307BDS-T1-E3

Enrgtech Part No:

ET20133560

Warranty:

Manufacturer

£ 0.41

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Rds On (Max) @ Id, Vgs:

78mOhm @ 3.2A, 10V

Detailed Description:

P-Channel 30V 2.5A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236)

Input Capacitance (Ciss) (Max) @ Vds:

380pF @ 15V

Mounting Type:

Surface Mount

Vgs(th) (Max) @ Id:

3V @ 250µA

Part Status:

Active

Series:

TrenchFET®

Vgs (Max):

±20V

Gate Charge (Qg) (Max) @ Vgs:

15nC @ 10V

Supplier Device Package:

SOT-23-3 (TO-236)

Drive Voltage (Max Rds On, Min Rds On):

4.5V, 10V

Packaging:

Cut Tape (CT)

SI2307BDS(Datasheets)

Vishay Siliconix SI2307BDS-T1-E3

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