SQ2318AES-T1_GE3 Vishay Siliconix

This is manufactured by Vishay Siliconix. The manufacturer part number is SQ2318AES-T1_GE3. It has typical 12 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 31mohm @ 6a, 10v. It features n-channel 40v 8a (tc) 3w (tc) surface mount sot-23-3 (to-236). The product's input capacitance at maximum includes 555pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. Furthermore, the product is active The product automotive, aec-q101, trenchfet®, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 13nc @ 10v. sot-23-3 (to-236) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 3w (tc). The product has a 40v drain to source voltage. The continuous current drain at 25°C is 8a (tc). This product use mosfet (metal oxide) technology. The vishay siliconix's product offers user-desired applications.

Vishay Siliconix SQ2318AES-T1_GE3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SQ2318AES-T1_GE3
Enrgtech Part No:
ET20133651
Warranty:
Manufacturer
£ 0.41
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Manufacturer Standard Lead Time:
12 Weeks
Rds On (Max) @ Id, Vgs:
31mOhm @ 6A, 10V
Detailed Description:
N-Channel 40V 8A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
Input Capacitance (Ciss) (Max) @ Vds:
555pF @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Part Status:
Active
Series:
Automotive, AEC-Q101, TrenchFET®
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V
Supplier Device Package:
SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
3W (Tc)
Drain to Source Voltage (Vdss):
40V
Current - Continuous Drain (Id) @ 25°C:
8A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Vishay Siliconix
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SQ2318AES(Datasheets)


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