SSM3K361R-LF Toshiba Semiconductor and Storage SSM3K361R,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K361R,LF. It has typical 12 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 69mohm @ 2a, 10v. It features n-channel 100v 3.5a (ta) 1.2w (ta) surface mount sot-23f. The product's input capacitance at maximum includes 430pf @ 15v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 100µa. Furthermore, the product is active The product u-mosviii-h, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 3.2nc @ 4.5v. sot-23f is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has 175°c operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 1.2w (ta). The product has a 100v drain to source voltage. The continuous current drain at 25°C is 3.5a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.

Toshiba Semiconductor and Storage SSM3K361R,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
SSM3K361R,LF
Enrgtech Part No:
ET20133673
Warranty:
Manufacturer
£ 0.41
Checking for live stock
Manufacturer Standard Lead Time:
12 Weeks
Rds On (Max) @ Id, Vgs:
69mOhm @ 2A, 10V
Detailed Description:
N-Channel 100V 3.5A (Ta) 1.2W (Ta) Surface Mount SOT-23F
Input Capacitance (Ciss) (Max) @ Vds:
430pF @ 15V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 100µA
Part Status:
Active
Series:
U-MOSVIII-H
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
3.2nC @ 4.5V
Supplier Device Package:
SOT-23F
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
175°C
FET Type:
N-Channel
Package / Case:
SOT-23-3 Flat Leads
Power Dissipation (Max):
1.2W (Ta)
Drain to Source Voltage (Vdss):
100V
Current - Continuous Drain (Id) @ 25°C:
3.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage


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