ZXMN6A08E6TA Diodes Incorporated
ZXMN6A08E6TA Diodes Incorporated
ZXMN6A08E6TA Diodes Incorporated

This is manufactured by Diodes Incorporated. The manufacturer part number is ZXMN6A08E6TA. It has typical 17 weeks of manufacturer standard lead time. It has a maximum Rds On and voltage of 80mohm @ 4.8a, 10v. It features n-channel 60v 2.8a (ta) 1.1w (ta) surface mount sot-26. The product's input capacitance at maximum includes 459pf @ 40v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa. Furthermore, the product is active The product has a 60v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 5.8nc @ 10v. sot-26 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in [Package/ Case]. The product carries maximum power dissipation 1.1w (ta). The continuous current drain at 25°C is 2.8a (ta). This product use mosfet (metal oxide) technology. The diodes incorporated's product offers user-desired applications.

Diodes Incorporated ZXMN6A08E6TA

Manufacturer:
Diodes Incorporated
Manufacturer Part No:
ZXMN6A08E6TA
Enrgtech Part No:
ET20134471
Warranty:
Manufacturer
£ 0.70
Checking for live stock
Manufacturer Standard Lead Time:
17 Weeks
Rds On (Max) @ Id, Vgs:
80mOhm @ 4.8A, 10V
Detailed Description:
N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26
Input Capacitance (Ciss) (Max) @ Vds:
459pF @ 40V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Part Status:
Active
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
5.8nC @ 10V
Supplier Device Package:
SOT-26
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
SOT-23-6
Power Dissipation (Max):
1.1W (Ta)
Current - Continuous Drain (Id) @ 25°C:
2.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Diodes Incorporated
pdf icon
Copper Bond Wire and Wafer Source 07/Nov/2013(PCN Other)
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ZXMN6A08E6(Datasheets)
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Date Code Mark Update 13/Jan/2015(PCN Design/Specification)
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Leadframe Material Update 09/Apr/2014(PCN Design/Specification)
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Diodes RoHS 3 Cert(Environmental Information)


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