IPB80N06S209ATMA1 N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon
IPB80N06S209ATMA1 N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK Infineon

This is N-Channel MOSFET 80 A 55 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB80N06S209ATMA1. Furthermore, the product is 9.25mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10mm. The product is available in surface mount configuration. The product optimos, is a highly preferred choice for users. In addition, the height is 4.4mm. Whereas, the minimum operating temperature of the product is -55 °c.

Infineon N-Channel MOSFET, 80 A, 55 V, 3-Pin D2PAK

Manufacturer:
Infineon
Manufacturer Part No:
IPB80N06S209ATMA1
Enrgtech Part No:
ET20178078
Warranty:
Manufacturer
£ 0.86
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Maximum Continuous Drain Current:
80 A
Transistor Material:
Si
Width:
9.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
55 V
Maximum Gate Threshold Voltage:
4V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
60 nC @ 10 V
Channel Type:
N
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
190 W
Series:
OptiMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
4.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
9.1 mΩ
pdf icon
IPB80N06S2-09, IPP80N06S2-09, OptiMOS Power-Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)


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