IPD30N06S2L23ATMA1 N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK Infineon

This is N-Channel MOSFET 30 A 55 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD30N06S2L23ATMA1. Furthermore, the product is 6.22mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.5mm. The product is available in surface mount configuration. The product optimos, is a highly preferred choice for users. In addition, the height is 2.3mm. Whereas, the minimum operating temperature of the product is -55 °c.

For more information please check the datasheets.

Infineon N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK

Manufacturer:

Infineon

Manufacturer Part No:

IPD30N06S2L23ATMA1

Enrgtech Part No:

ET20178099

Warranty:

Manufacturer

£ 0.67

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Maximum Continuous Drain Current:

30 A

Transistor Material:

Width:

6.22mm

Transistor Configuration:

Single

Maximum Drain Source Voltage:

55 V

Maximum Gate Threshold Voltage:

Package Type:

DPAK (TO-252)

Number of Elements per Chip:

Minimum Gate Threshold Voltage:

1.2V

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

33 nC @ 10 V

Channel Type:

ESD Control Selection Guide V1(Technical Reference)

IPD30N06S2L-23, OptiMOS Power-Transistor(Technical Reference)

Infineon N-Channel MOSFET, 30 A, 55 V, 3-Pin DPAK

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