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This is manufactured by Fujitsu Electronics America, Inc.. The manufacturer part number is MB85R4M2TFN-G-ASE1. It has typical 20 weeks of manufacturer standard lead time. It is a type of non-volatile memory type. It features fram (ferroelectric ram) memory ic 4mb (256k x 16) parallel 150ns 44-tsop. The product is available in surface mount configuration. Furthermore, the product is active It is available in the standard package of 500. It is a parallel memory interface. 44-tsop is the supplier device package value. Its typical moisture sensitivity level is 1 (unlimited). It allows a 150ns of write cycle time. In addition, tray is the available packaging type of the product. The product has -40°c ~ 85°c (ta) operating temperature range. It holds a typical memory size of 4mb (256k x 16). It has optimum voltage supply of 1.8 v ~ 3.6 v. Moreover, the product comes in [Package/ Case]. It is a sort of fram memory. This product use fram (ferroelectric ram) technology. Alternative Names include 865-1266 865-1266-1 865-1266-1-nd. It allows 150ns access time. The fujitsu electronics america, inc.'s product offers user-desired applications.
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