Maximum Continuous Drain Current:
35 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
710 V
Maximum Gate Threshold Voltage:
5V
Package Type:
TO-220FP
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
3V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
82 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
40 W
Series:
MDmesh M5
Maximum Gate Source Voltage:
-25 V, +25 V
Height:
16.4mm
Maximum Drain Source Resistance:
78 mΩ
Failure Rate:
B (0.1%)
Size / Dimension:
0.138" L x 0.110" W (3.50mm x 2.80mm)
Type:
Molded
ESR (Equivalent Series Resistance):
6.5 Ohm
Features:
Military
Mounting Type:
Surface Mount
Part Status:
Active
Series:
Military, MIL-PRF-55365/8, CWR11
Manufacturer Size Code:
B
Detailed Description:
1µF Molded Tantalum Capacitors 35V 1411 (3528 Metric) 6.5 Ohm
Manufacturer Standard Lead Time:
12 Weeks
Height - Seated (Max):
0.083" (2.10mm)
Packaging:
Cut Tape (CT)
Capacitance:
1µF
Operating Temperature:
-55°C ~ 125°C
Package / Case:
1411 (3528 Metric)
Voltage - Rated:
35V
Tolerance:
±5%
Manufacturer:
KEMET
Punch Type:
Rectangular