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sis862adn-t1-ge3 Vishay N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8 SIS862ADN-T1-GE3
sis862adn-t1-ge3 Vishay N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8 SIS862ADN-T1-GE3

Vishay N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8 SIS862ADN-T1-GE3

Vishay N-Channel MOSFET, 52 A, 60 V, 8-Pin PowerPAK 1212-8 SIS862ADN-T1-GE3

Manufacturer:
Vishay
Manufacturer Part No:
SIS862ADN-T1-GE3
Enrgtech Part No:
ET100031275
Warranty:
Manufacturer
£ 0.6900
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
52 A
Maximum Drain Source Voltage:
60 V
Package Type:
PowerPAK 1212-8
Mounting Type:
Surface Mount
Pin Count:
8
Maximum Drain Source Resistance:
11 mΩ
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2.5V
Minimum Gate Threshold Voltage:
1V
Maximum Power Dissipation:
39 W
Transistor Configuration:
Single
Maximum Gate Source Voltage:
±20 V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
19.8 nC @ 10 V
Length:
3.15mm
Width:
3.15mm
Number of Elements per Chip:
1
Forward Diode Voltage:
1.1V
Height:
1.07mm
Minimum Operating Temperature:
-55 °C
pdf icon
0900766b8170a2b1.pdf(datasheets)
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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