Maximum Continuous Drain Current:
110 A
Transistor Material:
Si
Width:
4.6mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4.5V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
72 nC @ 10 V
Channel Type:
N
Length:
10.4mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
150 W
Series:
STripFET H7
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.75mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
7 mΩ
Size / Dimension:
0.079" L x 0.049" W (2.00mm x 1.25mm)
Ratings:
AEC-Q200
Detailed Description:
10µF ±5% 6.3V Ceramic Capacitor X7R 0805 (2012 Metric)
Voltage - Rated:
6.3V
Mounting Type:
Surface Mount, MLCC
Applications:
Automotive, Bypass, Decoupling
Part Status:
Active
Series:
SMD Auto X7R
Temperature Coefficient:
X7R
Packaging:
Cut Tape (CT)
Capacitance:
10µF
Operating Temperature:
-55°C ~ 125°C
Package / Case:
0805 (2012 Metric)
Thickness (Max):
0.057" (1.45mm)
Tolerance:
±5%
Manufacturer Standard Lead Time:
38 Weeks
Manufacturer:
KEMET
