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sqs944enw-t1_ge3 Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SQS944ENW-T1_GE3
sqs944enw-t1_ge3 Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SQS944ENW-T1_GE3

Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SQS944ENW-T1_GE3

Vishay Siliconix Dual TrenchFET 2 Type N-Channel MOSFET, 6 A, 40 V Enhancement, 8-Pin PowerPAK 1212 SQS944ENW-T1_GE3

Manufacturer:
Vishay Siliconix
Manufacturer Part No:
SQS944ENW-T1_GE3
Enrgtech Part No:
ET100431595
Warranty:
Manufacturer
Pre-order

Estimated Delivery Time: 7-13 weeks

Each

Quantity
Unit Price (ex VAT)
25
£ 0.60
100
£ 0.51
500
£ 0.46
Order Today!
From: United Kingdom

Estimated Delivery Time: 7-13 weeks

Width:
3.15 mm
Height:
1.07mm
Length:
3.15mm
Series:
TrenchFET
Pin Count:
8
Mount Type:
Surface
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
PowerPAK 1212
Product Type:
MOSFET
Forward Voltage Vf:
0.82V
Automotive Standard:
AEC-Q101
Standards/Approvals:
No
Transistor Configuration:
Dual
Number of Elements per Chip:
2
Maximum Power Dissipation Pd:
27.8W
Typical Gate Charge Qg @ Vgs:
7.6nC
Maximum Operating Temperature:
175°C
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
20 V
Maximum Drain Source Voltage Vds:
40V
Maximum Continuous Drain Current Id:
6A
Maximum Drain Source Resistance Rds:
40mΩ
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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