IXYS Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227

Ixys IXFN80N50Q3 IXYS HiperFET, Q3-Class Type N-Channel MOSFET, 63 A, 500 V Enhancement, 4-Pin SOT-227

Manufacturer:
Manufacturer Part No:
IXFN80N50Q3
Enrgtech Part No:
ET100550080
Warranty:
Manufacturer
Pre-order

Estimated Delivery Time: 7-13 weeks

Each

Quantity
Unit Price (ex VAT)
1
£ 38.87
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From: United Kingdom

Estimated Delivery Time: 7-13 weeks

Height:
9.6mm
Length:
38.23mm
Series:
HiperFET, Q3-Class
Pin Count:
4
Mount Type:
Panel
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
SOT-227
Product Type:
MOSFET
Forward Voltage Vf:
1.4V
Automotive Standard:
No
Standards/Approvals:
No
Maximum Power Dissipation Pd:
780W
Typical Gate Charge Qg @ Vgs:
200nC
Maximum Operating Temperature:
150°C
Minimum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
500V
Maximum Continuous Drain Current Id:
63A
Maximum Drain Source Resistance Rds:
65mΩ
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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