IXYS Type N-Channel MOSFET, 600 A, 40 V Enhancement, 24-Pin SMPD

Ixys MMIX1T600N04T2 IXYS GigaMOS, HiperFET Type N-Channel MOSFET, 600 A, 40 V Enhancement, 24-Pin SMPD

Manufacturer:
Manufacturer Part No:
MMIX1T600N04T2
Enrgtech Part No:
ET10059956
Warranty:
Manufacturer
80 - In Stock

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Each

Quantity
Unit Price (ex VAT)
20
£ 17.10
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From: United Kingdom
Est Ship Date: 15 Sep, 2026
Est Fastest Delivery: 16 Sep, 2026
Height:
5.7mm
Length:
25.25mm
Series:
GigaMOS, HiperFET
Pin Count:
24
Mount Type:
Surface
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
SMPD
Product Type:
MOSFET
Forward Voltage Vf:
1.2V
Automotive Standard:
No
Standards/Approvals:
No
Maximum Power Dissipation Pd:
830W
Typical Gate Charge Qg @ Vgs:
590nC
Maximum Operating Temperature:
175°C
Minimum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
40V
Maximum Continuous Drain Current Id:
600A
Maximum Drain Source Resistance Rds:
1.3mΩ
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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