N-Channel MOSFET, 600 A, 40 V, 24-Pin SMPD MMIX1T600N04T2

Channel Type:

N

Maximum Continuous Drain Current:

600 A

Maximum Drain Source Voltage:

40 V

Series:

GigaMOS, HiperFET

Package Type:

SMPD

Mounting Type:

Surface Mount

Pin Count:

24

Maximum Drain Source Resistance:

1.3 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

3.5V

Maximum Power Dissipation:

830 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

-20 V, +20 V

Transistor Material:

Si

Width:

23.25mm

Typical Gate Charge @ Vgs:

590 nC @ 10 V

Number of Elements per Chip:

1

Maximum Operating Temperature:

+175 °C

Length:

25.25mm

Height:

5.7mm

Forward Diode Voltage:

1.2V

Minimum Operating Temperature:

-55 °C