Enrgtech
Enrgtech

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ixfn360n15t2 IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2
ixfn360n15t2 IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2

IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2

RoHs Compliant

Ixys IXFN360N15T2 IXYS GigaMOS TrenchT2 HiperFET Type N-Channel MOSFET, 310 A, 150 V Enhancement, 4-Pin SOT-227 IXFN360N15T2

Manufacturer:
Ixys
Manufacturer Part No:
IXFN360N15T2
Enrgtech Part No:
ET100883340
Warranty:
Manufacturer
Pre-order

Estimated Delivery Time: 7-13 weeks

Each

Quantity
Unit Price (ex VAT)
1
£ 33.98
2
£ 33.30
5
£ 32.28
Order Today!
From: United Kingdom

Estimated Delivery Time: 7-13 weeks

Height:
9.6mm
Length:
38.23mm
Series:
GigaMOS TrenchT2 HiperFET
Pin Count:
4
Mount Type:
Surface
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
SOT-227
Product Type:
MOSFET
Forward Voltage Vf:
1.2V
Automotive Standard:
No
Standards/Approvals:
No
Maximum Power Dissipation Pd:
1.07kW
Typical Gate Charge Qg @ Vgs:
715nC
Maximum Operating Temperature:
175°C
Minimum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
150V
Maximum Continuous Drain Current Id:
310A
Maximum Drain Source Resistance Rds:
4mΩ
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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