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ixfn360n10t IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T
ixfn360n10t IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T

IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T

RoHs Compliant

Ixys IXFN360N10T IXYS GigaMOS Trench HiperFET Type N-Channel MOSFET, 360 A, 100 V Enhancement, 4-Pin SOT-227 IXFN360N10T

Manufacturer:
Ixys
Manufacturer Part No:
IXFN360N10T
Enrgtech Part No:
ET100883343
Warranty:
Manufacturer
58 - In Stock

Ships in 2-3 business days

Each

Quantity
Unit Price (ex VAT)
1
£ 23.85
2
£ 21.48
5
£ 20.50
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From: United Kingdom
Est Ship Date: 08 Sep, 2026
Est Fastest Delivery: 09 Sep, 2026
Height:
9.6mm
Length:
38.23mm
Series:
GigaMOS Trench HiperFET
Pin Count:
4
Mount Type:
Surface
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
SOT-227
Product Type:
MOSFET
Forward Voltage Vf:
1.2V
Automotive Standard:
No
Standards/Approvals:
No
Maximum Power Dissipation Pd:
830W
Typical Gate Charge Qg @ Vgs:
525nC
Maximum Operating Temperature:
175°C
Minimum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
100V
Maximum Continuous Drain Current Id:
360A
Maximum Drain Source Resistance Rds:
2.6mΩ
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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