IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 4-Pin SOT-227 IXFN90N85X

IXYS HiperFET Type N-Channel MOSFET, 90 A, 850 V Enhancement, 4-Pin SOT-227 IXFN90N85X

Manufacturer:
Manufacturer Part No:
IXFN90N85X
Enrgtech Part No:
ET10942795
Warranty:
Manufacturer
Pre-order

Estimated Delivery Time: 7-13 weeks

Each

Quantity
Unit Price (ex VAT)
10
£ 29.61
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From: United Kingdom

Estimated Delivery Time: 7-13 weeks

Width:
25.07 mm
Height:
9.6mm
Length:
38.23mm
Series:
HiperFET
Pin Count:
4
Mount Type:
Surface
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
SOT-227
Product Type:
MOSFET
Forward Voltage Vf:
1.4V
Automotive Standard:
No
Standards/Approvals:
No
Maximum Power Dissipation Pd:
1.2kW
Typical Gate Charge Qg @ Vgs:
340nC
Maximum Operating Temperature:
150°C
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
30 V
Maximum Drain Source Voltage Vds:
850V
Maximum Continuous Drain Current Id:
90A
Maximum Drain Source Resistance Rds:
14MHz
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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