IXYS Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-263

Ixys IXFA22N65X2 IXYS HiperFET, X2-Class Type N-Channel MOSFET, 22 A, 650 V Enhancement, 3-Pin TO-263

Manufacturer:
Manufacturer Part No:
IXFA22N65X2
Enrgtech Part No:
ET10984004
Warranty:
Manufacturer
200 - In Stock

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Each

Quantity
Unit Price (ex VAT)
50
£ 2.24
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From: United Kingdom
Est Ship Date: 14 Sep, 2026
Est Fastest Delivery: 15 Sep, 2026
Height:
4.83mm
Length:
10.41mm
Series:
HiperFET, X2-Class
Pin Count:
3
Mount Type:
Surface
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
TO-263
Product Type:
MOSFET
Forward Voltage Vf:
1.4V
Automotive Standard:
No
Standards/Approvals:
No
Maximum Power Dissipation Pd:
390W
Typical Gate Charge Qg @ Vgs:
37nC
Maximum Operating Temperature:
150°C
Minimum Operating Temperature:
-55°C
Maximum Drain Source Voltage Vds:
650V
Maximum Continuous Drain Current Id:
22A
Maximum Drain Source Resistance Rds:
145mΩ
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.



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