The STMicroelectronics Power MOSFET is obtained through an extreme optimization of well established strip based Power MESH layout. In addition to pushing on resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
100% avalanche tested
Gate charge minimized
N-Channel MOSFET, 6 A, 600 V, 3-Pin TO-220 STP6NK60Z
Manufacturer:
STMicroelectronics
Manufacturer Part No:
STP6NK60Z
Enrgtech Part No:
ET11664943
Warranty:
Manufacturer
£ 0.59
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Channel Type:
N
Maximum Continuous Drain Current:
6 A
Maximum Drain Source Voltage:
600 V
Series:
SuperMESH
Package Type:
TO-220
Mounting Type:
Through Hole
Pin Count:
3
Channel Mode:
Enhancement
Number of Elements per Chip:
1
