Dual N/P-Channel-Channel MOSFET, 3.9 A, 5.3 A, 60 V, 8-Pin SOIC SI4559ADY-T1-GE3

Channel Type:

N, P

Maximum Continuous Drain Current:

3.9 A, 5.3 A

Maximum Drain Source Voltage:

60 V

Package Type:

SOIC

Mounting Type:

Surface Mount

Pin Count:

8

Maximum Drain Source Resistance:

72 mΩ, 150 mΩ

Channel Mode:

Enhancement

Minimum Gate Threshold Voltage:

1V

Maximum Power Dissipation:

3.1 W, 3.4 W

Transistor Configuration:

Isolated

Maximum Gate Source Voltage:

-20 V, +20 V

Typical Gate Charge @ Vgs:

13 nC @ 30 V, 14.5 nC @ 30 V

Number of Elements per Chip:

2

Maximum Operating Temperature:

+150 °C

Length:

5mm

Width:

4mm

Transistor Material:

Si

Minimum Operating Temperature:

-55 °C

Height:

1.5mm