


N-Channel MOSFET, E Series, Low Figure-of-Merit, Vishay Semiconductor
The E Series Power MOSFETs from Vishay are high-voltage transistors featuring ultra-low maximum on-resistance, low figure of merit and fast switching. They are available in a wide range of current ratings. Typical applications include servers and telecom power supplies, LED lighting, flyback converters, power factor correction (PFC) and switch mode power supplies (SMPS).
Features
Low figure-of-merit (FOM) RDS(on) x Qg
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses
Low input capacitance (Ciss)
Low on-resistance (RDS(on))
Ultra-low gate charge (Qg)
Fast switching
Reduced switching and conduction losses

N-Channel MOSFET, 47 A, 600 V, 3-Pin TO-247AC SiHG47N60E-GE3
Manufacturer:
Vishay
Manufacturer Part No:
SiHG47N60E-GE3
Enrgtech Part No:
ET14080549
Warranty:
Manufacturer
£ 7.40
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Channel Type:
N
Maximum Continuous Drain Current:
47 A
Maximum Drain Source Voltage:
600 V
Series:
E Series
Package Type:
TO-247AC
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
64 mΩ
Channel Mode:
Enhancement
Minimum Gate Threshold Voltage:
2V
Maximum Power Dissipation:
357 W
Transistor Configuration:
Single