N-Channel MOSFET, 150 A, 80 V, 3-Pin TO-220AB SUP60020E-GE3

Channel Type:

N

Maximum Continuous Drain Current:

150 A

Maximum Drain Source Voltage:

80 V

Package Type:

TO-220AB

Mounting Type:

Through Hole

Pin Count:

3

Maximum Drain Source Resistance:

2.8 mΩ

Channel Mode:

Enhancement

Maximum Gate Threshold Voltage:

4V

Minimum Gate Threshold Voltage:

2V

Maximum Power Dissipation:

375 W

Transistor Configuration:

Single

Maximum Gate Source Voltage:

±20 V

Typical Gate Charge @ Vgs:

151.2 nC @ 10 V

Length:

10.51mm

Maximum Operating Temperature:

+175 °C

Number of Elements per Chip:

1

Width:

4.65mm

Minimum Operating Temperature:

-55 °C

Forward Diode Voltage:

1.5V

Height:

9.01mm