This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
N-Channel MOSFET, 300 mA, 60 V, 3-Pin TO-92 TN2106N3-G
Manufacturer:
Microchip
Manufacturer Part No:
TN2106N3-G
Enrgtech Part No:
ET18606033
Warranty:
Manufacturer
£ 0.54
Checking for live stock
Channel Type:
N
Maximum Continuous Drain Current:
300 mA
Maximum Drain Source Voltage:
60 V
Package Type:
TO-92
Series:
TN2106
Mounting Type:
Through Hole
Pin Count:
3
Maximum Drain Source Resistance:
5 Ω
Channel Mode:
Enhancement
Maximum Gate Threshold Voltage:
2V
Minimum Gate Threshold Voltage:
0.6V
Maximum Power Dissipation:
740 mW
