Maximum Drain Source Voltage:
60 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
300 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.5V
Height:
0.94mm
Width:
1.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
7.5 Ω
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
115 mA
Transistor Material:
Si
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
11 Weeks
Rds On (Max) @ Id, Vgs:
7.5Ohm @ 500mA, 10V
Detailed Description:
N-Channel 60V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Input Capacitance (Ciss) (Max) @ Vds:
50pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Part Status:
Active
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Supplier Device Package:
SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
225mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
115mA (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
