Maximum Drain Source Voltage:
20 V, 30 V
Typical Gate Charge @ Vgs:
0.9 nC @ 5 V, 2.2 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
270 mW
Maximum Gate Source Voltage:
-20 V, -12 V, +12 V, +20 V
Maximum Gate Threshold Voltage:
1.5V
Height:
1mm
Width:
1.35mm
Length:
2.2mm
Maximum Drain Source Resistance:
2.5 Ω, 500 mΩ
Package Type:
SOT-363 (SC-88)
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
250 mA, 880 mA
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
