SPD04P10PLGBTMA1 P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon
SPD04P10PLGBTMA1 P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK Infineon

This is P-Channel MOSFET 4.2 A 100 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is SPD04P10PLGBTMA1. Furthermore, the product is 6.22mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. The product is available in surface mount configuration. The product sipmos, is a highly preferred choice for users. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55 °c.

Infineon P-Channel MOSFET, 4.2 A, 100 V, 3-Pin DPAK

Manufacturer:
Infineon
Manufacturer Part No:
SPD04P10PLGBTMA1
Enrgtech Part No:
ET20178088
Warranty:
Manufacturer
£ 0.46
Checking for live stock
Maximum Continuous Drain Current:
4.2 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
2V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
12 nC @ 10 V
Channel Type:
P
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
38 W
Series:
SIPMOS
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
1.05 Ω
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SPD04P10PL G, SIPMOS Power-Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)


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