IPB120P04P4L03ATMA1 P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK Infineon
IPB120P04P4L03ATMA1 P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK Infineon

This is P-Channel MOSFET 120 A 40 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB120P04P4L03ATMA1. Furthermore, the product is 9.25mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10mm. The product is available in surface mount configuration. The product optimos p, is a highly preferred choice for users. In addition, the height is 4.4mm. Whereas, the minimum operating temperature of the product is -55 °c.

Infineon P-Channel MOSFET, 120 A, 40 V, 3-Pin D2PAK

Manufacturer:
Infineon
Manufacturer Part No:
IPB120P04P4L03ATMA1
Enrgtech Part No:
ET20178095
Warranty:
Manufacturer
£ 1.79
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Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
9.25mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
D2PAK (TO-263)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
180 nC @ 10 V
Channel Type:
P
Length:
10mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
136 W
Series:
OptiMOS P
Maximum Gate Source Voltage:
-16 V, +16 V
Height:
4.4mm
Minimum Operating Temperature:
-55 °C
Maximum Drain Source Resistance:
5.2 mΩ
pdf icon
IPB120P04P4L-03, IPI120P04P4L-03, IPP120P04P4L-03, OptiMOS-P2 Power-Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)


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