IPB029N06N3GE8187ATMA1 N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK Infineon

This is N-Channel MOSFET 120 A 60 V 3-Pin D2PAK manufactured by Infineon. The manufacturer part number is IPB029N06N3GE8187ATMA1. Furthermore, the product is 9.45mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.31mm. The product is available in surface mount configuration. The product optimos 3, is a highly preferred choice for users. In addition, the height is 4.57mm. Whereas, the minimum operating temperature of the product is -55 °c.

For more information please check the datasheets.

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK

Manufacturer:

Infineon

Manufacturer Part No:

IPB029N06N3GE8187ATMA1

Enrgtech Part No:

ET20178113

Warranty:

Manufacturer

£ 0.60

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Maximum Continuous Drain Current:

120 A

Transistor Material:

Width:

9.45mm

Transistor Configuration:

Single

Maximum Drain Source Voltage:

60 V

Maximum Gate Threshold Voltage:

Package Type:

D2PAK (TO-263)

Number of Elements per Chip:

Minimum Gate Threshold Voltage:

Maximum Operating Temperature:

+175 °C

Typical Gate Charge @ Vgs:

124 nC @ 10 V

Channel Type:

IPB029N06N3 G, IPI032N06N3 G, IPP032N06N3 G, OptiMOS3 Power-Transistor(Technical Reference)

ESD Control Selection Guide V1(Technical Reference)

Infineon N-Channel MOSFET, 120 A, 60 V, 3-Pin D2PAK

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