IPD78CN10NGATMA1 N-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK Infineon
IPD78CN10NGATMA1 N-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK Infineon

This is N-Channel MOSFET 13 A 100 V 3-Pin DPAK manufactured by Infineon. The manufacturer part number is IPD78CN10NGATMA1. Furthermore, the product is 6.22mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 6.73mm. The product is available in surface mount configuration. The product optimos 2, is a highly preferred choice for users. In addition, the height is 2.41mm. Whereas, the minimum operating temperature of the product is -55 °c.

Infineon N-Channel MOSFET, 13 A, 100 V, 3-Pin DPAK

Manufacturer:
Infineon
Manufacturer Part No:
IPD78CN10NGATMA1
Enrgtech Part No:
ET20184614
Warranty:
Manufacturer
£ 0.52
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Maximum Continuous Drain Current:
13 A
Transistor Material:
Si
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
100 V
Maximum Gate Threshold Voltage:
4V
Package Type:
DPAK (TO-252)
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
8 nC @ 10 V
Channel Type:
N
Length:
6.73mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
31 W
Series:
OptiMOS 2
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
2.41mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
78 mΩ
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ESD Control Selection Guide V1(Technical Reference)
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IPB79CN10N G, IPD78CN10N G, IPI80CN10N G, IPP80CN10N G, OptiMOS2 Power MOSFET Transistor(Technical Reference)


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