IPP041N12N3GXKSA1 N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 Infineon
IPP041N12N3GXKSA1 N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220 Infineon

This is N-Channel MOSFET 120 A 120 V 3-Pin TO-220 manufactured by Infineon. The manufacturer part number is IPP041N12N3GXKSA1. Furthermore, the product is 4.57mm wide. It has a maximum operating temperature of +175 °c. The product is available in [Cannel Type] channel. Its accurate length is 10.36mm. The product is available in through hole configuration. The product optimos 3, is a highly preferred choice for users. In addition, the height is 15.95mm. Whereas, the minimum operating temperature of the product is -55 °c.

RoHs Compliant

Infineon N-Channel MOSFET, 120 A, 120 V, 3-Pin TO-220

Manufacturer:
Infineon
Manufacturer Part No:
IPP041N12N3GXKSA1
Enrgtech Part No:
ET20184618
Warranty:
Manufacturer
£ 4.01
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Maximum Continuous Drain Current:
120 A
Transistor Material:
Si
Width:
4.57mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
120 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
158 nC
Channel Type:
N
Length:
10.36mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
300 W
Series:
OptiMOS 3
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
15.95mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
4.1 mΩ
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IPI041N12N3 G, IPP041N12N3 G, IPB038N12N3 G, OptiMOS3 Power MOSFET Transistor(Technical Reference)
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ESD Control Selection Guide V1(Technical Reference)


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