NDS356AP P-Channel MOSFET, 1.1 A, 30 V, 3-Pin SOT-23 ON Semiconductor
NDS356AP P-Channel MOSFET, 1.1 A, 30 V, 3-Pin SOT-23 ON Semiconductor

This is P-Channel MOSFET 1.1 A 30 V 3-Pin SOT-23 manufactured by ON Semiconductor. The manufacturer part number is NDS356AP. The product is available in surface mount configuration. In addition, the height is 0.94mm. Furthermore, the product is 1.4mm wide. Its accurate length is 2.92mm. Whereas, the minimum operating temperature of the product is -55 °c. The product is available in [Cannel Type] channel. It has a maximum operating temperature of +150 °c.

RoHs Compliant

ON Semiconductor P-Channel MOSFET, 1.1 A, 30 V, 3-Pin SOT-23

Manufacturer:
ON Semiconductor
Manufacturer Part No:
NDS356AP
Enrgtech Part No:
ET20185426
Warranty:
Manufacturer
£ 0.24
Checking for live stock
Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
3.4 nC @ 5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
500 mW
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
0.94mm
Width:
1.4mm
Length:
2.92mm
Maximum Drain Source Resistance:
400 mΩ
Package Type:
SOT-23
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
1.1 A
Transistor Material:
Si
Forward Diode Voltage:
1.2V
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
pdf icon
NDS356AP, P-Channel Logic Level Enhancement Mode Field Effect Transistor(Technical Reference)
pdf icon
ESD Control Selection Guide V1(Technical Reference)


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