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sia112ldj-t1-ge3 Vishay SIA Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 7-Pin SC-70-6L
sia112ldj-t1-ge3 Vishay SIA Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 7-Pin SC-70-6L
sia112ldj-t1-ge3 Vishay SIA Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 7-Pin SC-70-6L

Vishay SIA Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 7-Pin SC-70-6L

Vishay SIA Type N-Channel MOSFET, 8.8 A, 100 V Enhancement, 7-Pin SC-70-6L

Manufacturer:
Vishay
Manufacturer Part No:
SIA112LDJ-T1-GE3
Enrgtech Part No:
ET28368834
Warranty:
Manufacturer
Pre-order

Estimated Delivery Time: 7-13 weeks

Each

Quantity
Unit Price (ex VAT)
3000
£ 0.13
Order Today!
From: United Kingdom

Estimated Delivery Time: 7-13 weeks

Length:
2.05mm
Series:
SIA
Pin Count:
7
Mount Type:
Surface
Channel Mode:
Enhancement
Channel Type:
Type N
Package Type:
SC-70-6L
Product Type:
MOSFET
Automotive Standard:
No
Standards/Approvals:
RoHS
Maximum Power Dissipation Pd:
15.6W
Typical Gate Charge Qg @ Vgs:
5.4nC
Maximum Operating Temperature:
150°C
Minimum Operating Temperature:
-55°C
Maximum Gate Source Voltage Vgs:
±20 V
Maximum Drain Source Voltage Vds:
100V
Maximum Continuous Drain Current Id:
8.8A
Maximum Drain Source Resistance Rds:
0.119Ω
Explore MOSFETs engineered for fast switching and efficiency. Enrgtech offers power transistors ideal for voltage regulation, amplification, and electronic control systems.
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