FZT1151ATA Diodes Incorporated
FZT1151ATA Diodes Incorporated
FZT1151ATA Diodes Incorporated
FZT1151ATA Diodes Incorporated

This is manufactured by Diodes Incorporated. The manufacturer part number is FZT1151ATA. It has typical 15 weeks of manufacturer standard lead time. Base Part Number: fzt1151a. It features bipolar (bjt) transistor pnp 40v 3a 145mhz 2.5w surface mount sot-223. Furthermore, 250 @ 500ma, 2v is the minimum DC current gain at given voltage. The transistor is a pnp type. The transition frequency of the product is 145mhz. The product is available in surface mount configuration. The 300mv @ 250ma, 3a is the maximum Vce saturation. Furthermore, the product is active sot-223 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 40v. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. The maximum power of the product is 2.5w. Moreover, the product comes in [Package/ Case]. The maximum collector current includes 3a. In addition, 100na is the maximum current at collector cutoff. The diodes incorporated's product offers user-desired applications.

Diodes Incorporated FZT1151ATA

Manufacturer:
Diodes Incorporated
Manufacturer Part No:
FZT1151ATA
Enrgtech Part No:
ET20133309
Warranty:
Manufacturer
£ 0.77
Checking for live stock
Manufacturer Standard Lead Time:
15 Weeks
Base Part Number:
FZT1151A
Detailed Description:
Bipolar (BJT) Transistor PNP 40V 3A 145MHz 2.5W Surface Mount SOT-223
DC Current Gain (hFE) (Min) @ Ic, Vce:
250 @ 500mA, 2V
Transistor Type:
PNP
Frequency - Transition:
145MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250mA, 3A
Part Status:
Active
Supplier Device Package:
SOT-223
Voltage - Collector Emitter Breakdown (Max):
40V
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
Power - Max:
2.5W
Package / Case:
TO-261-4, TO-261AA
Current - Collector (Ic) (Max):
3A
Current - Collector Cutoff (Max):
100nA
Manufacturer:
Diodes Incorporated
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Multiple Device Changes 29/Apr/2013(PCN Other)
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Wafer Source 21/Apr/2017(PCN Assembly/Origin)
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FZT1151A(Datasheets)
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Die Layover Addition 19/Aug/2016(PCN Design/Specification)
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Date Code Mark Update 13/Jan/2015(PCN Design/Specification)
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Diodes RoHS 3 Cert(Environmental Information)


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