RN4981FE-LF-CB Toshiba Semiconductor and Storage RN4981FE,LF(CB

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN4981FE,LF(CB. Resistor - Base - 4.7 kohms. It features pre-biased bipolar transistor (bjt) 1 npn, 1 pnp - pre-biased (dual) 50v 100ma 250mhz, 200mhz 100mw surface mount es6. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. The transition frequency of the product is 250mhz, 200mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 4.7 kohms. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. Alternative Names include rn4981fe(te85lf)ct rn4981fe(te85lf)ct-nd rn4981felf(cbct rn4981felf(ctct rn4981felf(ctct-nd. The toshiba semiconductor and storage's product offers user-desired applications.

For more information please check the datasheets.

Toshiba Semiconductor and Storage RN4981FE,LF(CB

Manufacturer:

Toshiba Semiconductor and Storage

Manufacturer Part No:

RN4981FE,LF(CB

Enrgtech Part No:

ET11209806

Warranty:

Manufacturer

£ 0.23

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Resistor - Base (R1):

4.7 kOhms

Detailed Description:

Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6

DC Current Gain (hFE) (Min) @ Ic, Vce:

30 @ 10mA, 5V

Transistor Type:

1 NPN, 1 PNP - Pre-Biased (Dual)

Frequency - Transition:

250MHz, 200MHz

Mounting Type:

Surface Mount

Vce Saturation (Max) @ Ib, Ic:

300mV @ 250µA, 5mA

Part Status:

Discontinued at Digi-Key

Standard Package:

Supplier Device Package:

ES6

Voltage - Collector Emitter Breakdown (Max):

50V

Packaging:

Cut Tape (CT)

Toshiba Semiconductor and Storage RN4981FE,LF(CB

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