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RN1907FE-LF-CB Toshiba Semiconductor and Storage RN1907FE,LF(CB

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1907FE,LF(CB. It has typical 16 weeks of manufacturer standard lead time. Resistor - Base - 10 kohms. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 250mhz 100mw surface mount es6. The maximum collector current includes 100ma. Furthermore, the product is active Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in [Package/ Case]. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 250mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 npn - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. es6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Alternative Names include rn1907fe(t5lft)ct rn1907fe(t5lft)ct-nd rn1907felf(cbct rn1907felf(ctct rn1907felf(ctct-nd.

RoHs Compliant

Toshiba Semiconductor and Storage RN1907FE,LF(CB

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
RN1907FE,LF(CB
Enrgtech Part No:
ET11253380
Warranty:
Manufacturer
£ 0.23
Checking for live stock
Manufacturer Standard Lead Time:
16 Weeks
Resistor - Base (R1):
10 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount ES6
Current - Collector (Ic) (Max):
100mA
Part Status:
Active
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
SOT-563, SOT-666
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Frequency - Transition:
250MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Supplier Device Package:
ES6
Packaging:
Cut Tape (CT)
Power - Max:
100mW
Other Names:
RN1907FE(T5LFT)CT RN1907FE(T5LFT)CT-ND RN1907FELF(CBCT RN1907FELF(CTCT RN1907FELF(CTCT-ND
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