Resistor - Base (R1):
10 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:
50 @ 10mA, 5V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition:
250MHz, 200MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Part Status:
Active
Standard Package:
1
Supplier Device Package:
US6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
10 kOhms
Power - Max:
200mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100µA (ICBO)
Other Names:
RN4982LF(CTCT
RN4982T5LFTCT
RN4982T5LFTCT-ND
Manufacturer:
Toshiba Semiconductor and Storage