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RN4907FE-LF-CB Toshiba Semiconductor and Storage RN4907FE,LF(CB

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN4907FE,LF(CB. Resistor - Base - 10 kohms. It features pre-biased bipolar transistor (bjt) 1 npn, 1 pnp - pre-biased (dual) 50v 100ma 250mhz, 200mhz 100mw surface mount es6. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 1 npn, 1 pnp - pre-biased (dual) type. The transition frequency of the product is 250mhz, 200mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 1. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47 kohms. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 100ma. In addition, 500na is the maximum current at collector cutoff. Alternative Names include rn4907fe(t5lft)ct rn4907fe(t5lft)ct-nd rn4907felf(cbct rn4907felf(ctct rn4907felf(ctct-nd. The toshiba semiconductor and storage's product offers user-desired applications.

RoHs Compliant

Toshiba Semiconductor and Storage RN4907FE,LF(CB

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
RN4907FE,LF(CB
Enrgtech Part No:
ET11758437
Warranty:
Manufacturer
£ 0.18
Checking for live stock
Resistor - Base (R1):
10 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 100mW Surface Mount ES6
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Transistor Type:
1 NPN, 1 PNP - Pre-Biased (Dual)
Frequency - Transition:
250MHz, 200MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Part Status:
Active
Standard Package:
1
Supplier Device Package:
ES6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Resistor - Emitter Base (R2):
47 kOhms
Power - Max:
100mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
SOT-563, SOT-666
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
500nA
Other Names:
RN4907FE(T5LFT)CT RN4907FE(T5LFT)CT-ND RN4907FELF(CBCT RN4907FELF(CTCT RN4907FELF(CTCT-ND
Manufacturer:
Toshiba Semiconductor and Storage
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