Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2906,LF. It has typical 12 weeks of manufacturer standard lead time. Resistor - Base - 4.7 kohms. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 200mhz 200mw surface mount us6. The maximum collector current includes 100ma. Furthermore, the product is active Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in [Package/ Case]. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a 2 pnp - pre-biased (dual) type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. us6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 200mw. Alternative Names include rn2906lf(ctct rn2906lf(ctct-nd rn2906lfct.
Basket Total:
£ 0
We don't have this product in stock at the moment. Our maximum lead time can extend to two weeks.
We will keep you informed about the delivery status and shipment date once you have placed your order.
