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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2606(TE85L,F). Resistor - Base - 4.7 kohms. It features pre-biased bipolar transistor (bjt) 2 pnp - pre-biased (dual) 50v 100ma 200mhz 300mw surface mount sm6. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 pnp - pre-biased (dual) type. The transition frequency of the product is 200mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. sm6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. Resistor - Emittor Base (R2) - 47 kohms. The maximum power of the product is 300mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn2606(te85lf)ct. The toshiba semiconductor and storage's product offers user-desired applications.
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