RN1910-LF-CT Toshiba Semiconductor and Storage RN1910,LF(CT

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1910,LF(CT. It has typical 10 weeks of manufacturer standard lead time. Resistor - Base - 4.7 kohms. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 250mhz 100mw surface mount us6. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn - pre-biased (dual) type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 1. us6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn1910(t5lft)ct rn1910(t5lft)ct-nd rn1910lf(ctct. The toshiba semiconductor and storage's product offers user-desired applications.

RoHs Compliant

Toshiba Semiconductor and Storage RN1910,LF(CT

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
RN1910,LF(CT
Enrgtech Part No:
ET12084907
Warranty:
Manufacturer
£ 0.23
Checking for live stock
Manufacturer Standard Lead Time:
10 Weeks
Resistor - Base (R1):
4.7 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 100mW Surface Mount US6
DC Current Gain (hFE) (Min) @ Ic, Vce:
120 @ 1mA, 5V
Transistor Type:
2 NPN - Pre-Biased (Dual)
Frequency - Transition:
250MHz
Mounting Type:
Surface Mount
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Part Status:
Active
Standard Package:
1
Supplier Device Package:
US6
Voltage - Collector Emitter Breakdown (Max):
50V
Packaging:
Cut Tape (CT)
Power - Max:
100mW
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Collector (Ic) (Max):
100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
Other Names:
RN1910(T5LFT)CT RN1910(T5LFT)CT-ND RN1910LF(CTCT
Manufacturer:
Toshiba Semiconductor and Storage


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