Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1911FETE85LF. Resistor - Base - 10 kohms. It features pre-biased bipolar transistor (bjt) 2 npn - pre-biased (dual) 50v 100ma 250mhz 100mw surface mount es6. Furthermore, 120 @ 1ma, 5v is the minimum DC current gain at given voltage. The transistor is a 2 npn - pre-biased (dual) type. The transition frequency of the product is 250mhz. The product is available in surface mount configuration. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. es6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 100ma. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn1911fete85lfct. The toshiba semiconductor and storage's product offers user-desired applications.
Basket Total:
£ 0
We don't have this product in stock at the moment. Our maximum lead time can extend to two weeks.
We will keep you informed about the delivery status and shipment date once you have placed your order.
