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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN4C06J-BL(TE85L,F. The maximum collector current includes 100ma. It features bipolar (bjt) transistor array 2 npn (dual) common emitter 120v 100ma 100mhz 300mw surface mount smv. Furthermore, 200 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a 2 npn (dual) common emitter type. The transition frequency of the product is 100mhz. The product is available in surface mount configuration. The 300mv @ 1ma, 10ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. smv is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 120v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 300mw. Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include hn4c06j-bl(te85lfct. The toshiba semiconductor and storage's product offers user-desired applications.
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