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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN4B04J(TE85L,F). The maximum collector current includes 500ma. It features bipolar (bjt) transistor array npn, pnp 30v 500ma 200mhz 300mw surface mount smv. Furthermore, 70 @ 100ma, 1v is the minimum DC current gain at given voltage. The transistor is a npn, pnp type. The transition frequency of the product is 200mhz. The product is available in surface mount configuration. The 250mv @ 10ma, 100ma is the maximum Vce saturation. Furthermore, the product is obsolete It is available in the standard package of 1. smv is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 30v. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. The maximum power of the product is 300mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100µa (icbo) is the maximum current at collector cutoff. Alternative Names include hn4b04j(te85lf)ct. The toshiba semiconductor and storage's product offers user-desired applications.
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