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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is ULN2004AFWG,N,E. Base Part Number: uln200*a. It features bipolar (bjt) transistor array 7 npn darlington 50v 500ma 1.25w 16-sol. Furthermore, 1000 @ 350ma, 2v is the minimum DC current gain at given voltage. The transistor is a 7 npn darlington type. The 1.6v @ 500µa, 350ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. 16-sol is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has -40°c ~ 85°c (ta) operating temperature range. The maximum power of the product is 1.25w. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 500ma. In addition, 50µa is the maximum current at collector cutoff. Alternative Names include uln2004afwg(5elmct uln2004afwg(5elmct-nd uln2004afwg(o,nehzct uln2004afwg(o,nehzct-nd uln2004afwg(oelmct uln2004afwg(oelmct-nd uln2004afwgnect. The toshiba semiconductor and storage's product offers user-desired applications.
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