Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1A01FU-Y,LF. It has typical 12 weeks of manufacturer standard lead time. The maximum collector current includes 150ma. It features bipolar (bjt) transistor array 2 pnp (dual) 50v 150ma 80mhz 200mw surface mount us6. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a 2 pnp (dual) type. The transition frequency of the product is 80mhz. The product is available in surface mount configuration. The 300mv @ 10ma, 100ma is the maximum Vce saturation. Furthermore, the product is active It is available in the standard package of 1. us6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 125°c (tj) operating temperature range. The maximum power of the product is 200mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include hn1a01fu-y(t5lft)ct hn1a01fu-y(t5lft)ct-nd hn1a01fu-ylfct. The toshiba semiconductor and storage's product offers user-desired applications.
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