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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is HN1B01FU-Y(L,F,T). The maximum collector current includes 150ma. It features bipolar (bjt) transistor array npn, pnp 50v 150ma 120mhz 200mw surface mount us6. Furthermore, 120 @ 2ma, 6v is the minimum DC current gain at given voltage. The transistor is a npn, pnp type. The transition frequency of the product is 120mhz. The product is available in surface mount configuration. The 300mv @ 10ma, 100ma is the maximum Vce saturation. Furthermore, the product is discontinued at digi-key It is available in the standard package of 1. us6 is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 50v. In addition, cut tape (ct) is the available packaging type of the product. The product has 125°c (tj) operating temperature range. The maximum power of the product is 200mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include hn1b01fu-y(lft)ct. The toshiba semiconductor and storage's product offers user-desired applications.
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