RN1404S-LF Toshiba Semiconductor and Storage RN1404S,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1404S,LF. Resistor - Base - 47 kohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 250mhz 200mw surface mount s-mini. The maximum collector current includes 100ma. Furthermore, the product is discontinued at digi-key Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in [Package/ Case]. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. Base Part Number: rn140*. The transition frequency of the product is 250mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a npn - pre-biased type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 200mw. Alternative Names include rn1404slfct.

RoHs Compliant

Toshiba Semiconductor and Storage RN1404S,LF

Manufacturer:
Toshiba Semiconductor and Storage
Manufacturer Part No:
RN1404S,LF
Enrgtech Part No:
ET10923942
Warranty:
Manufacturer
£ 0.18
Checking for live stock
Resistor - Base (R1):
47 kOhms
Detailed Description:
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini
Current - Collector (Ic) (Max):
100mA
Part Status:
Discontinued at Digi-Key
Resistor - Emitter Base (R2):
47 kOhms
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 10mA, 5V
Base Part Number:
RN140*
Frequency - Transition:
250MHz
Voltage - Collector Emitter Breakdown (Max):
50V
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Transistor Type:
NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic:
300mV @ 250µA, 5mA
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
500nA
Mounting Type:
Surface Mount
Supplier Device Package:
S-Mini
Packaging:
Cut Tape (CT)
Power - Max:
200mW
Other Names:
RN1404SLFCT


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