RN1406-LF Toshiba Semiconductor and Storage RN1406,LF

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1406,LF. It has typical 12 weeks of manufacturer standard lead time. Resistor - Base - 4.7 kohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 50v 100ma 250mhz 200mw surface mount s-mini. The maximum collector current includes 100ma. Furthermore, the product is active Resistor - Emittor Base (R2) - 47 kohms. Moreover, the product comes in [Package/ Case]. Furthermore, 80 @ 10ma, 5v is the minimum DC current gain at given voltage. Base Part Number: rn140*. The transition frequency of the product is 250mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a npn - pre-biased type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. s-mini is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 200mw. Alternative Names include rn1406lfct rn1406slfct rn1406slfct-nd.

For more information please check the datasheets.

Toshiba Semiconductor and Storage RN1406,LF

Manufacturer:

Toshiba Semiconductor and Storage

Manufacturer Part No:

RN1406,LF

Enrgtech Part No:

ET11151000

Warranty:

Manufacturer

£ 0.19

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Manufacturer Standard Lead Time:

12 Weeks

Resistor - Base (R1):

4.7 kOhms

Detailed Description:

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 250MHz 200mW Surface Mount S-Mini

Current - Collector (Ic) (Max):

100mA

Part Status:

Active

Resistor - Emitter Base (R2):

47 kOhms

Package / Case:

TO-236-3, SC-59, SOT-23-3

DC Current Gain (hFE) (Min) @ Ic, Vce:

80 @ 10mA, 5V

Base Part Number:

RN140*

Frequency - Transition:

250MHz

Voltage - Collector Emitter Breakdown (Max):

50V

Standard Package:

Toshiba Semiconductor and Storage RN1406,LF

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