Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN2301,LF. It has typical 16 weeks of manufacturer standard lead time. Resistor - Base - 4.7 kohms. It features pre-biased bipolar transistor (bjt) pnp - pre-biased 50v 100ma 200mhz 100mw surface mount usm. The maximum collector current includes 100ma. Furthermore, the product is active Resistor - Emittor Base (R2) - 4.7 kohms. Moreover, the product comes in [Package/ Case]. Furthermore, 30 @ 10ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 200mhz. The maximum collector emitter breakdown voltage of the product is 50v. It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The transistor is a pnp - pre-biased type. The 300mv @ 250µa, 5ma is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 500na is the maximum current at collector cutoff. The product is available in surface mount configuration. usm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 100mw. Alternative Names include rn2301(te85lf)ct rn2301(te85lf)ct-nd rn2301lfct.
Basket Total:
£ 0
We don't have this product in stock at the moment. Our maximum lead time can extend to two weeks.
We will keep you informed about the delivery status and shipment date once you have placed your order.
