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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is RN1441ATE85LF. Resistor - Base - 5.6 kohms. It features pre-biased bipolar transistor (bjt) npn - pre-biased 20v 300ma 30mhz 200mw surface mount s-mini. Furthermore, 200 @ 4ma, 2v is the minimum DC current gain at given voltage. The transistor is a npn - pre-biased type. The transition frequency of the product is 30mhz. The product is available in surface mount configuration. The 100mv @ 3ma, 30ma is the maximum Vce saturation. Furthermore, the product is obsolete It is available in the standard package of 1. s-mini is the supplier device package value. The maximum collector emitter breakdown voltage of the product is 20v. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 200mw. Its typical moisture sensitivity level is 1 (unlimited). Moreover, the product comes in [Package/ Case]. The maximum collector current includes 300ma. In addition, 100na (icbo) is the maximum current at collector cutoff. Alternative Names include rn1441ate85lfct. The toshiba semiconductor and storage's product offers user-desired applications.
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